v rrm = 20 v - 100 v i f = 160 a features ? high surge capability to-249ab package ? types up to 100v v rrm ? isolated to plate parameter symbol fst16020 fst16030 unit re p etitive p eak reverse volta g e v rrm 20 30 v silicon power schottk y diode fst16020 thru FST16040 FST16040 35 fst16035 maximum ratings, at t j = 25 c, unless otherwise specified conditions 40 pp g rms reverse voltage v rms 14 21 v dc blocking voltage v dc 20 30 v continuous forward current i f 160 160 a operating temperature t j -40 to 125 -40 to 125 c storage temperature t stg -40 to 175 -40 to 175 c parameter symbol fst16020 fst16030 unit diode forward voltage 0.75 0.75 11 10 10 thermal characteristics thermal resistance, junction - case r thjc 1.0 1.0 c/w electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f 10 a 1200 v r = 20 v, t j = 25 c i f = 160 a, t j = 25 c t c 100 c conditions 25 1200 1200 -40 to 175 160 160 1200 -40 to 175 FST16040 11 fst16035 1.0 v r = 20 v, t j = 125 c 1.0 0.75 0.75 10 ma v -40 to 125 -40 to 125 t c = 25 c, t p = 8.3 ms 28 40 35 www.genesicsemi.com 1
fst16020 thru FST16040 www.genesicsemi.com 2
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